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2SA1412-Z PDF预览

2SA1412-Z

更新时间: 2024-01-04 19:21:14
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关
页数 文件大小 规格书
2页 66K
描述
High Voltage: VCEO=-400V High speed:tr 0.7ìs Collector to Base Voltage VCBO -400 V

2SA1412-Z 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):2 A最小直流电流增益 (hFE):40
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

2SA1412-Z 数据手册

 浏览型号2SA1412-Z的Datasheet PDF文件第2页 
Transistors  
Product specification  
2SA1412-Z  
TO-252  
Unit: mm  
6.50+0.15  
-0.15  
2.30+0.1  
-0.1  
5.30+0.2  
0.50+0.8  
-0.7  
-0.2  
Features  
High Voltage: VCEO=-400V  
High speed:tr 0.7ìs  
0.127  
max  
0.80+0.1  
-0.1  
0.60+0.1  
2.3  
4.60+0.15  
-0.1  
1 Base  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-400  
-400  
V
-7  
V
Collector Current (DC)  
-2  
A
Collector Current (Pulse) *1  
Total power Dissipation (Ta=25 ) *2  
Junction Tmeperature  
IC  
-4  
2
A
PT  
W
Tj  
150  
Storage Temperature  
Tstg  
-55 to 150  
*1 pw 10ms,Duty Cycle 50%  
*2 When mounted on ceramic substrate of 7.5cm2X0.7mm  
4008-318-123  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  

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