是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 0.1 A | 配置: | Single |
最小直流电流增益 (hFE): | 200 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.2 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1330O7-T2B | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, MINIMO | |
2SA1330O7-T2B-A | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, MINIMO | |
2SA1330-T1B | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, MINIMO | |
2SA1330-T1B-A | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, MINIMO | |
2SA1330-T1BO5 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI | |
2SA1330-T1BO6 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI | |
2SA1330-T2B | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI | |
2SA1330-T2B-A | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, MINIMO | |
2SA1330-T2B-AT | RENESAS |
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TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),SOT-23VAR | |
2SA1331 | KEXIN |
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PNP Epitaxial Planar Silicon Transistors |