Datasheet > 2SA1331-O4

2SA1331-O4

更新时间： 2024-12-02 01:07:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1048K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1331-O4 数据手册

SMD Type

TransistIoCrs

PNP Transistors

2SA1331

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Fast switching speed.

High breakdown voltage.

Small-sized package permitting the 2SA1331/

2SC3361-applied sets to be made small and slim.

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-60

Unit

VCBO

VCEO

VEBO

-50

-5

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

-150

150

125

℃

Storage Temperature range

Tstg

-55 to 125

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

-60

-50

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA，RBE=∞

= -100μA， I =0

CB= -40 V , I =0

EB= -4V , I =0

=- 1mA

= -1mA

E=0

CBO

EBO

-100

-0.4

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-10 mA, I

-0.1

= -10 mA, I

-0.75 -1.1

400

CE= -6V, I

Delay time

Rise time

Storage time

Fall time

120

190

200

Common base output capacitance

Transition frequency

CB= -6V, f=100MHz

CE= -6V, I = -1mA

3.5

100

MHz

■ Classification of hfe

Type

Range

Marking

2SA1331-O4

90-180

2SA1331-O5

135-270

2SA1331-O6

200-400

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