Datasheet > 2SA1333

2SA1333

更新时间： 2022-12-26 14:35:56

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	170K
描述
Silicon PNP Power Transistors

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2SA1333 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1333

DESCRIPTION

·With MT-200 package

·High power dissipation

APPLICATIONS

·Audio and general purpose applications

PINNING (see Fig.2)

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (MT-200) and symbol

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-200

-5

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

-15

I_B

Base current

-5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

150

℃

T_j

150

T_stg

-55~150

12 3

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