生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.79 |
最大集电极电流 (IC): | 0.05 A | 集电极-发射极最大电压: | 250 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1322 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 50MA I(C) | TO-126 | |
2SA1323 | PANASONIC |
获取价格 |
Silicon PNP epitaxial planer type | |
2SA1323B | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 30MA I(C) | SIP | |
2SA1323C | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 30MA I(C) | SIP | |
2SA1324 | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),SOT-23 | |
2SA1325 | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PNP,120V V(BR)CEO,100MA I(C),SOT-23 | |
2SA1326 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SOT-23 | |
2SA1327 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1327 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1327 | ISC |
获取价格 |
Silicon PNP Power Transistors |