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2SA1323 PDF预览

2SA1323

更新时间: 2024-11-29 22:45:03
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 47K
描述
Silicon PNP epitaxial planer type

2SA1323 数据手册

 浏览型号2SA1323的Datasheet PDF文件第2页浏览型号2SA1323的Datasheet PDF文件第3页 
Transistor  
2SA1323  
Silicon PNP epitaxial planer type  
For high-frequency amplification  
Complementary to 2SC3314  
Unit: mm  
4.0±0.2  
Features  
Allowing supply with the radial taping.  
High transition frequency fT.  
Optimum for high-density mounting.  
Absolute Maximum Ratings (Ta=25˚C)  
marking  
1
2
3
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–30  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
–20  
V
1.27 1.27  
–5  
V
2.54±0.15  
–60  
mA  
mA  
mW  
˚C  
1:Emitter  
2:Collector  
3:Base  
IC  
–30  
EIAJ:SC–72  
New S Type Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
300  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
ICEO  
IEBO  
Conditions  
min  
typ  
max  
– 0.1  
–100  
–10  
Unit  
µA  
VCB = –10V, IE = 0  
Collector cutoff current  
VCE = –20V, IB = 0  
VEB = –5V, IC = 0  
µA  
Emitter cutoff current  
µA  
*
Forward current transfer ratio  
hFE  
VCE = –10V, IC = –1mA  
70  
220  
Collector to emitter saturation voltage VCE(sat)  
IC = –10mA, IB = –1mA  
VCE = –10V, IC = –1mA  
– 0.1  
– 0.7  
300  
2.8  
V
V
Base to emitter voltage  
Transition frequency  
VBE  
fT  
VCB = –10V, IE = 1mA, f = 200MHz  
150  
MHz  
dB  
Noise figure  
NF  
Zrb  
Cre  
VCB = –10V, IE = 1mA, f = 5MHz  
VCB = –10V, IE = 1mA, f = 2MHz  
VCE = –10V, IC = –1mA, f = 10.7MHz  
4.0  
50  
Reverse transfer impedance  
Common emitter reverse transfer capacitanse  
22  
1.2  
2.0  
pF  
*hFE Rank classification  
Rank  
hFE  
B
C
70 ~ 140  
110 ~ 220  
1

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