2SA1327A-Y

更新时间： 2024-01-10 17:26:34

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器闪光灯
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数据手册

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2SA1327A-Y 数据手册

2SA1327A

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1327A

Strobe Flash Applications

Unit: mm

Audio Power Amplifier Applications

•

High DC current gain: h

= 70 (min) (V

= −2 V, I = −1 A)

CE C

Low collector saturation voltage: V

= −0.5 V (max)

CE (sat)

(I = −8 A, I = −0.4 A)

•

High collector power dissipation: P = 20 W (Tc = 25°C)

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

−20

Collector-emitter voltage

Emitter-base voltage

−8

−10

Collector current

Base current

Pulse

−20

JEDEC

―

−2

JEITA

Ta = 25°C

Tc = 25°C

2.0

Collector power

dissipation

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-09

12 3 4

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