生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.77 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 12 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 70 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1329 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1329 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1329 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1329 | TOSHIBA |
获取价格 |
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) | |
2SA1329 | NJSEMI |
获取价格 |
Trans GP BJT PNP 20V 0.03A | |
2SA1329O | ISC |
获取价格 |
Transistor | |
2SA1329Y | TOSHIBA |
获取价格 |
TRANSISTOR 12 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power | |
2SA1330 | NEC |
获取价格 |
HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD | |
2SA1330 | KEXIN |
获取价格 |
PNP Silicon Epitaxial Transistor | |
2SA1330 | TYSEMI |
获取价格 |
High DC current gain. High voltage. Collector-base voltage VCBO -200 V |