是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.5 A | 配置: | Single |
最小直流电流增益 (hFE): | 160 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 30 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1221L-T | RENESAS |
获取价格 |
2SA1221L-T | |
2SA1221L-T-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,140V V(BR)CEO,500MA I(C),SPAKVAR | |
2SA1221M | NEC |
获取价格 |
BJT | |
2SA1221-M | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1221-M | RENESAS |
获取价格 |
500mA, 140V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SA1221-M-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1221M-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,140V V(BR)CEO,500MA I(C),SPAKVAR | |
2SA1221M-T | RENESAS |
获取价格 |
2SA1221M-T | |
2SA1221M-T-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,140V V(BR)CEO,500MA I(C),SPAKVAR | |
2SA1222 | NEC |
获取价格 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |