2SA1221M

更新时间： 2024-11-17 23:19:55

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
4页	87K
描述
BJT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SA1221M 数据手册

DATA SHEET

SILICON TRANSISTORS

2SA1221, 1222

PNP SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

Ideal for use of high withstanding voltage current such as TV

vertical deflection output, audio output, and variable power

supplies.

•

Complementary transistor with 2SC2958 and 2SC2959

V^CEO= 140 V: 2SA1221/2SC2958

V^CEO= 160 V: 2SA1222/2SC2959

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

P^T

Ratings

−160

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Total power dissipation

Junction temperature

Storage temperature

−140/–160

−5.0

−500

−1.0

1.0

°C

T^j

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −100 V, I^E= 0

V^EB= −5.0 V, I^C= 0

MIN.

TYP.

MAX.

−200

400

Unit

I^EBO

V^CE= −2.0 V, I^C= −100 mA

V^CE= −5.0 V, I^C= −20 mA

I^C= −1.0 A, I^B= −0.2 A

h^FE**

V^BE**

V^CE(sat)**

V^BE(sat)**

C^ob

100

150

−0.64

−0.6

−1.1

−0.6

−0.7

−0.9

−0.3

DC base voltage

Collector saturation voltage

Base saturation voltage

Output capacitance

Gain bandwidth product

I^C= −1.0 A, I^B= −0.2 A

V^CB= −10 V, I^E= 0, f = 1.0 MHz

V^CE= −10 V, I^E= 20 mA

MHz

f^T

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16143EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

中文翻译

下载PDF

与2SA1221M相关器件

型号	品牌	获取价格	描述	数据表
2SA1221-M	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon
2SA1221-M	RENESAS	获取价格	500mA, 140V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1221-M-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon
2SA1221M-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,140V V(BR)CEO,500MA I(C),SPAKVAR
2SA1221M-T	RENESAS	获取价格	2SA1221M-T
2SA1221M-T-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,140V V(BR)CEO,500MA I(C),SPAKVAR
2SA1222	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
2SA1222	RENESAS	获取价格	500mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1222-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon
2SA1222K	NEC	获取价格	BJT