生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.52 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 140 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 45 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1221-M-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1221M-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,140V V(BR)CEO,500MA I(C),SPAKVAR | |
2SA1221M-T | RENESAS |
获取价格 |
2SA1221M-T | |
2SA1221M-T-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,140V V(BR)CEO,500MA I(C),SPAKVAR | |
2SA1222 | NEC |
获取价格 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS | |
2SA1222 | RENESAS |
获取价格 |
500mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SA1222-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1222K | NEC |
获取价格 |
BJT | |
2SA1222-K | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1222K-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,160V V(BR)CEO,500MA I(C),SPAKVAR |