是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.5 A |
配置: | Single | 最小直流电流增益 (hFE): | 100 |
最高工作温度: | 150 °C | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 1 W | 子类别: | Other Transistors |
表面贴装: | NO | 标称过渡频率 (fT): | 30 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1222 | NEC |
获取价格 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS | |
2SA1222 | RENESAS |
获取价格 |
500mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SA1222-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1222K | NEC |
获取价格 |
BJT | |
2SA1222-K | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1222K-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,160V V(BR)CEO,500MA I(C),SPAKVAR | |
2SA1222-K-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1222K-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,160V V(BR)CEO,500MA I(C),SPAKVAR | |
2SA1222K-T | RENESAS |
获取价格 |
2SA1222K-T | |
2SA1222K-T-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,160V V(BR)CEO,500MA I(C),SPAKVAR |