Datasheet > 2SA1216

2SA1216

更新时间： 2024-11-18 06:17:15

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	94K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SA1216 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SA1216

DESCRIPTION

·With MT-200 package

·Complement to type 2SC2922

APPLICATIONS

·Audio and general purpose

PINNING(see Fig.2)

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (MT-200) and symbol

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-180

-5

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

-17

I_B

Base current

-5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

200

℃

T_j

150

T_stg

-55~150

12 3 4

中文翻译

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2SA1216G	ALLEGRO	获取价格	Power Bipolar Transistor, 17A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
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2SA1216O	ISC	获取价格	Transistor
2SA1216P	ALLEGRO	获取价格	Power Bipolar Transistor, 17A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
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2SA1216Y	ISC	获取价格	Transistor
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