2SA1220AQ

更新时间： 2024-11-18 13:04:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	107K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SA1220AQ 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

2SA1220AQ 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

2SA1220/A

DESCRIPTION

·Good Linearity of h_FE

·High Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -120V(Min)-2SA1220

= -160V(Min)-2SA1220A

·Complement to Type 2SC2690/A

APPLICATIONS

·Adudio frequency power amplifier

·High frequency power amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

-120

-160

-120

-160

-5

UNIT

2SA1220

2SA1220A

2SA1220

2SA1220A

V_CBO

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_C

Collector Current-Continuous

Collector Current-Peak

-1.2

I_CM

-2.5

I_B

Base Current-Continuous

-0.3

Collector Power Dissipation

@ T_a=25℃

1.2

P_C

Total Power Dissipation

@ T_C=25℃

T_J

Junction Temperature

150

℃

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

中文翻译

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2SA1221K-T-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,140V V(BR)CEO,500MA I(C),SPAKVAR
2SA1221L	NEC	获取价格	BJT
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