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2SA1220 PDF预览

2SA1220

更新时间: 2024-11-18 05:56:35
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 107K
描述
isc Silicon PNP Power Transistors

2SA1220 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.79

2SA1220 数据手册

 浏览型号2SA1220的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistors  
2SA1220/A  
DESCRIPTION  
·Good Linearity of hFE  
·High Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= -120V(Min)-2SA1220  
= -160V(Min)-2SA1220A  
·Complement to Type 2SC2690/A  
APPLICATIONS  
·Adudio frequency power amplifier  
·High frequency power amplifier  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-120  
-160  
-120  
-160  
-5  
UNIT  
2SA1220  
2SA1220A  
2SA1220  
2SA1220A  
VCBO  
Collector-Base Voltage  
V
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
VEBO  
V
A
A
A
IC  
Collector Current-Continuous  
Collector Current-Peak  
-1.2  
ICM  
-2.5  
IB  
Base Current-Continuous  
-0.3  
Collector Power Dissipation  
@ Ta=25℃  
1.2  
PC  
W
Total Power Dissipation  
@ TC=25℃  
20  
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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