Datasheet > 2SA1201

2SA1201

更新时间： 2024-01-01 23:11:08

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管放大器
页数	文件大小	规格书
2页	351K
描述
SOT-89 Plastic-Encapsulate Transistors

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中文翻译

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技术参数
数据手册

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2SA1201 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.63
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2SA1201 数据手册

WILLAS

2SA1201

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP)

FEATURES

SOT-89

High voltage

High transition frequency

1. ^BASE

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

2. ^COLLECTOR

3. ^EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-120

-5

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

-0.8

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature

0.5

℃

T_J

150

T_stg

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

-120

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-1mA,I_E=0

V_(BR)CEOI_C=-10mA,I_B=0

V_(BR)EBOI_E=-1mA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=-120V,I_E=0

-0.1

240

-1

μA

Emitter cut-off current

V_EB=-5V,I_C=0

DC current gain

V_CE=-5V,I_C=-100mA

I_C=-500mA,I_B=-50mA

V_CE=-5V,I_C=-500mA

V_CE=-5V,I_C=-100mA

V_CB=-10V,I_E=0,f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

-1

Transition frequency

f_T

120

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

80-160

120-240

Range

Marking

2012-10

WILLAS ELECTRONIC CORP.

中文翻译

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