2SA1037Q-T

更新时间： 2024-11-18 13:04:07

品牌	Logo	应用领域
RECTRON		晶体晶体管
页数	文件大小	规格书
2页	290K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SA1037Q-T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

2SA1037Q-T 数据手册

RECTRON

TECHNICAL SPECIFICATION

SEMICONDUCTOR

2SA1037

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

FEATURES

* Power dissipation

PCM :

0.2

(Tamb=25^OC)

Collector current

ICM :

Collector-base voltage

-0.15

-60

(BR)CBO

SOT-23

Operating and storage junction temperature range

T ,Tstg: -55^OCto+150^OC

COLLECTOR

0.055(1.40)

0.047(1.20)

BASE

MECHANICAL DATA

* Case: Molded plastic

EMITTER

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

0.006(0.15)

0.003(0.08)

0.043(1.10)

0.035(0.90)

0.020(0.50)

0.012(0.30)

0.004(0.10)

0.000(0.00)

* Weight: 0.008 gram

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.019(2.00)

0.071(1.80)

0.118(3.00)

0.110(2.80)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^OC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )

CHARACTERISTICS

Collector-base breakdown voltage (I = -50µA, I =0)

SYMBOL

MIN.

-60

TYP.

MAX.

UNITS

(BR)CBO

(BR)CEO

-50

Collector-emitter breakdown voltage (I = -1mA, I =0)

Emitter-base breakdown voltage (I = -50µA, I =0)

(BR)EBO

-6

Collector cut-off current (V = -60V, I =0)

-0.1

µA

CBO

Emitter cut-off current (V = -6V, I =0)

EBO

DC current gain (V = -6V, I = -1mA)

120

560

-0.5

Collector-emitter saturation voltage (I = -50mA, I = -5mA)

CE(sat)

Transistion frequency (V = -12V, I = -2mA, f= 30MHz)

120

MHz

CLASSIFICATION OF h

RANK

Range

180-390

120-270

270-560

Marking

2006-3

中文翻译

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