2SA1037-S-TP-HF

更新时间： 2024-10-30 13:04:07

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	170K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SA1037-S-TP-HF 数据手册

M C C

2SA1037-Q

2SA1037-R

2SA1037-S

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Small Package

Mounting:any position

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

PNP Silicon

Epitaxial Transistors

SOT-23

Maximum Ratings @ T_a= 25?(unless otherwise noted)

Symbol

I_C

Parameter

Value

-0.15

Unit

Collector Current

P_D

Total Device Dissipation

Junction Temperature

0.2

T_J

150

T_STG

Storage Temperature Range

-55 to +150

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

OFF CHARACTERISTICS

Parameter

Min

Max

Units

Collector-Emitter Breakdown Voltage

(I_C=-1mAdc,I_B=0)

Collector-Base Breakdown Voltage

(I_C=-50uAdc,I_E=0)

Collector-Base Breakdown Voltage

(I_E=-50uAdc,I_C=0)

Collector-Base Cutoff Current

(V_CB=-60Vdc, I_E=0)

V(BR)CEO

-50

-60

-6.0

V(BR)CBO

DIMENSIONS

INCHES

MIN

V(BR)EBO

I_CBO

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

-0.1

µAdc

uAdc

Emitter-Base Cutoff Current

(V_EB=-6.0Vdc, I_C=0)

I_EBO

ON CHARACTERISTICS

DC Current Gain

120

560

-0.5

(I_C=-1.0mAdc, V_CE=-6.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=-5.0mAdc, I_B=-5.0mAdc)

Transition Frequency

.085

.37

V_CE(sat)

Vdc

Suggested Solder

Pad Layout

ꢀ_ꢀ

MHZ

(VCE=-12Vdc,IC=-2mAdc,f=30MHZ)

.031

.800

CLASSIFICATION OF hFE

Rank

180-390

.035

.900

Range

120-270

270-560

Marking

.079

2.000

inches

.037

.950

.037

.950

www.mccsemi.com

Revision: A

2011/01/01

1 of 2

中文翻译

下载PDF

与2SA1037-S-TP-HF相关器件

型号	品牌	获取价格	描述	数据表
2SA1037-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C
2SA1038	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 50MA I(C) \| TO-92
2SA1038/R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
2SA1038/RS	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
2SA1038/S	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
2SA1038R	ROHM	获取价格	50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1038S	ROHM	获取价格	High-voltage Amplifier Transistor (−120V, −50mA)
2SA1038S/R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon,
2SA1038S/RS	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon,
2SA1038S/S	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon,

与2SA1037-S-TP-HF相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

19
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

2SA1037-S-TP-HF

2SA1037-S-TP-HF 数据手册

与2SA1037-S-TP-HF相关器件

与2SA1037-S-TP-HF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SA1037-S-TP-HF

2SA1037-S-TP-HF 数据手册

与2SA1037-S-TP-HF相关器件

与2SA1037-S-TP-HF相关文章

您还可以找

您在本页遇到什么问题？