Datasheet > 2PD1820AR

2PD1820AR

更新时间： 2024-11-15 06:23:43

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	48K
描述
NPN General Purpose Transistor

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中文翻译

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数据手册

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2PD1820AR 数据手册

SMD Type

TransistIoCrs

NPN General Purpose Transistor

2PD1820A

Features

High current (max. 500 mA).

Low voltage (max. 50 V).

Low collector-emitter saturation voltage (max. 600 mV).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

500

Collector current

Peak collector current

I^CM

Peak base current

I^BM

200

Total power dissipation

Storage temperature

P^tot

200

T^stg

-65 to +150

150

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient

Tamb

Rth j-a

-65 to +150

625

K/W

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cut-off current

I^CBO

I^EBO

h^FE

IE = 0; VCB = 20 V

ìA

I^E= 0; VCB = 20 V; Tj = 150

IC = 0; VEB = 4 V

Emitter cut-off current

DC current gain

2PD1820AQ

2PD1820AR

2PD1820AS

170

240

340

IC = 150 mA; VCE = 10 V; *

120

170

Collector-emitter saturation voltage

Collector capacitance

V^CE(sat)IC = 300 mA; IB = 30 mA; *

600

C^c

f^T

IE = ie = 0; VCB = 10 V; f = 1 MHz

Transition frequency

IC = 50 mA; VCE = 10 V; f = 100 MHz;*

MHz

150

* Pulse test: tp

300 ìs; ä

0.02.

hFE Classification

TYPE

2PD1820AQ

2PD1820AR 2PD1820AS

AR AS

Marking

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