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2PD1820AS

更新时间: 2024-11-15 12:53:35
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 73K
描述
High current (max. 500 mA). Low collector-emitter saturation voltage (max. 600 mV).

2PD1820AS 数据手册

  
Product specification  
2PD1820A  
Features  
High current (max. 500 mA).  
Low voltage (max. 50 V).  
Low collector-emitter saturation voltage (max. 600 mV).  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
60  
Collector-emitter voltage  
Emitter-base voltage  
50  
V
5
500  
V
Collector current  
mA  
A
Peak collector current  
ICM  
1
Peak base current  
IBM  
200  
mA  
mW  
Total power dissipation  
Storage temperature  
Ptot  
200  
Tstg  
Tj  
-65 to +150  
150  
Junction temperature  
Operating ambient temperature  
Thermal resistance from junction to ambient  
Tamb  
Rth j-a  
-65 to +150  
625  
K/W  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
10  
5
Unit  
nA  
Collector cut-off current  
ICBO  
IE = 0; VCB = 20 V  
ìA  
nA  
IE = 0; VCB = 20 V; Tj = 150  
IC = 0; VEB = 4 V  
Emitter cut-off current  
IEBO  
10  
DC current gain  
2PD1820AQ  
2PD1820AR  
2PD1820AS  
85  
170  
240  
340  
hFE  
IC = 150 mA; VCE = 10 V; *  
120  
170  
Collector-emitter saturation voltage  
Collector capacitance  
VCE(sat) IC = 300 mA; IB = 30 mA; *  
600  
15  
mV  
pF  
Cc  
fT  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
Transition frequency  
IC = 50 mA; VCE = 10 V; f = 100 MHz;*  
MHz  
150  
* Pulse test: tp  
300 ìs; ä  
0.02.  
hFE Classification  
TYPE  
2PD1820AQ  
AQ  
2PD1820AR 2PD1820AS  
AR AS  
Marking  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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