是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
Is Samacsys: | N | 其他特性: | RADIATION HARDENED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 12 A | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 125 W |
最大脉冲漏极电流 (IDM): | 36 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7287R2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-204AA | |
2N7287R3 | RENESAS |
获取价格 |
12A, 250V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
2N7287R4 | RENESAS |
获取价格 |
12A, 250V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
2N7288 | RENESAS |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Met | |
2N7288D | INTERSIL |
获取价格 |
Radiation Hardened N-Channel Power MOSFETs | |
2N7288D1 | RENESAS |
获取价格 |
9A, 250V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | |
2N7288D3 | RENESAS |
获取价格 |
9A, 250V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | |
2N7288D4 | RENESAS |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Met | |
2N7288H | INTERSIL |
获取价格 |
Radiation Hardened N-Channel Power MOSFETs | |
2N7288H1 | RENESAS |
获取价格 |
9A, 250V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |