生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-MSFM-P3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | RADIATION HARDENED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 9 A | 最大漏源导通电阻: | 0.415 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AA |
JESD-30 代码: | R-MSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 27 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N7288H | INTERSIL | Radiation Hardened N-Channel Power MOSFETs |
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2N7288H1 | RENESAS | 9A, 250V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
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2N7288H3 | RENESAS | Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Met |
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2N7288R | INTERSIL | Radiation Hardened N-Channel Power MOSFETs |
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2N7288R1 | RENESAS | 9A, 250V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
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2N7288R3 | RENESAS | Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Met |
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