2N7002T

更新时间： 2024-02-05 02:41:02

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
4页	288K
描述
N-Channel ENHANCEMENT MODE POWER MOSFET

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获取价格

技术参数
数据手册

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2N7002T 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002T 数据手册

2N7002T

ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

(BR)DSS

=0V,I =10µA

Gate-Threshold Voltage

=VGS, I =250µA

th(GS)

Gate-body Leakage*

= 20V, V =0V

µA

GSS

Zero Gate Voltage Drain Current

=0V, V =60V

DSS

On-state Drain Current

=10V, V =7.5V

500

1000

D(ON)

Drain-Source On-Resistance

2.0

4.4

7.5

13.5

=5V, I =50mA

DS(on)

=10V, I =500mA

Forward Tranconductance

=10V, I =200mA

gfs

Input Capacitance

=25V, V =0V, f=1MHz

iss

Output Capacitance

=25V, V =0V, f=1MHz

oss

Reverse Transfer Capacitance

=25V, V =0V, f=1MHz

rss

SWITCHING

Turn-on Time

D(on)

=30V, R =150Ω, I =200mA, V

=10V, R

=25Ω

GEN

=30V, R =150Ω, I =200mA, V

GEN

WEITRON

http://www.weitron.com.tw

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17-Sep-09

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