Datasheet > 2N7002T,215

2N7002T,215

更新时间： 2023-02-26 13:58:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	78K
描述
2N7002T - N-channel TrenchMOS logic level FET TO-236 3-Pin

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2N7002T,215 数据手册

2N7002T

N-channel TrenchMOS FET

Rev. 01 — 17 November 2005

Product data sheet

1. Product proﬁle

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS technology.

1.2 Features

■ Logic level threshold compatible

■ Surface-mounted package

■ Very fast switching

■ TrenchMOS technology

1.3 Applications

■ Logic level translator

■ High-speed line driver

1.4 Quick reference data

■ V_DS≤ 60 V

■ R_DSon≤ 5 Ω

■ I_D≤ 300 mA

■ P_tot≤ 0.83 W

2. Pinning information

Table 1:

Pinning

Description

gate (G)

Simpliﬁed outline

Symbol

source (S)

drain (D)

mbb076

SOT23

12 3 4 5 6 7...12

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型号	品牌	描述	获取价格	数据表
2N7002T/R	ETC	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 115MA I(D) \| TO-236AB	获取价格
2N7002T_09	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002T_1	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002T_10	SECOS	N-Channel Enhancement MOSFET	获取价格
2N7002T_11	SECOS	0.115A , 60V , RDS(ON) 7.2Ω N-Channel Enhance	获取价格
2N7002T_12	UTC	300mA, 60V N-CHANNEL POWER MOSFET	获取价格