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2N7000TAD75Z PDF预览

2N7000TAD75Z

更新时间: 2024-11-18 14:37:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
2页 45K
描述
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

2N7000TAD75Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.56Is Samacsys:N
配置:SINGLE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.2 A最大漏源导通电阻:5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7000TAD75Z 数据手册

 浏览型号2N7000TAD75Z的Datasheet PDF文件第2页 
2N7000BU/2N7000TA  
Advanced Small Signal MOSFET  
FEATURES  
BVDSS = 60 V  
RDS(on) = 5.0 Ω  
ID = 200 mA  
n Fast Switching Times  
n Improved Inductive Ruggedness  
n Lower Input Capacitance  
n Extended Safe Operating Area  
n Improved High Temperature Reliability  
TO-92  
1.Source 2. Gate 3. Drain  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
60  
Units  
VDSS  
V
Continuous Drain Current (TC=25)  
Continuous Drain Current (TC=100)  
Drain Current-Pulsed  
200  
110  
1000  
±30  
400  
3.2  
mA  
ID  
IDM  
mA  
V
VGS  
Gate-to-Source Voltage  
Total Power Dissipation (TC=25)  
Linear Derating Factor  
mW  
PD  
TJ , TSTG  
TL  
mW/℃  
Operating Junction and  
- 55 to +150  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8? from case for 5-seconds  
Thermal Resistance  
Symbol  
Characteristic  
Junction-to-Ambient  
Typ.  
--  
Max.  
Units  
/W  
RθJA  
312.5  
Rev. A  

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