生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.56 | Is Samacsys: | N |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 0.2 A | 最大漏源导通电阻: | 5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7000TAJ05Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000TR1 | CALOGIC |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000TR2 | CALOGIC |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000TR3 | CALOGIC |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000X | CALOGIC |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000Z | UTC |
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115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET | |
2N7000ZG-T92-B | UTC |
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115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET | |
2N7000ZG-T92-K | UTC |
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115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET | |
2N7000ZG-T92-R | UTC |
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115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET | |
2N7000ZL1 | ONSEMI |
获取价格 |
Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 |