Datasheet > 2N7001K

2N7001K

更新时间： 2024-10-15 17:01:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	698K
描述
0.3A, 60V, 0.36W, P Channel, Small Signal MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N7001K 数据手册

P-Channel Enhancement Mode MOSFET

2N7001K

Features



Low on-resistance

High-speed switching

Drive circuits can be simple

Parallel use is easy

ESD protected gate up to 1kV HBM

Typical Applications



P-channel enhancement mode effect transistor

Switching application

Mechanical Data



Case: SOT-23

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-23

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

2N7001K

SOT-23

3000 pcs / Tape & Reel

7001K

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-60

±20

Gate -Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 70°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_A= 25°C ) ^*1

Operating Junction Temperature Range

Storage Temperature Range

-0.3

I_D

-0.2

-0.16

-1

I_DM

E_AS

P_D

0.3

°C

0.36

T_J

-55 ~ +150

T_STG

MTM5047A: June 2023 [2.0]

www.gmesemi.com

12 3 4 5

中文翻译

下载PDF

与2N7001K相关器件

型号	品牌	获取价格	描述	数据表
2N7001T	TI	获取价格	1 位双电源缓冲电压信号转换器
2N7001TDCKR	TI	获取价格	1 位双电源缓冲电压信号转换器 \| DCK \| 5 \| -40 to 125
2N7001TDPWR	TI	获取价格	1 位双电源缓冲电压信号转换器 \| DPW \| 5 \| -40 to 125
2N7001T-Q1	TI	获取价格	汽车类 1 位双电源缓冲电压信号转换器
2N7001TQDCKRQ1	TI	获取价格	汽车类 1 位双电源缓冲电压信号转换器 \| DCK \| 5 \| -40 to 125
2N7002	VISHAY	获取价格	DMOS Transistors (N-Channel)
2N7002	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor
2N7002	WINNERJOIN	获取价格	MOSFET (N-Channel)
2N7002	TI	获取价格	TAS5612L-TAS5614LDDVEVM
2N7002	ONSEMI	获取价格	N沟道增强模式场效应晶体管60V，0.115A，7.5Ω