Datasheet > 2N7001K

2N7001K

更新时间： 2024-11-22 17:01:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	698K
描述
0.3A, 60V, 0.36W, P Channel, Small Signal MOSFETs

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2N7001K 数据手册

P-Channel Enhancement Mode MOSFET

2N7001K

Features



Low on-resistance

High-speed switching

Drive circuits can be simple

Parallel use is easy

ESD protected gate up to 1kV HBM

Typical Applications



P-channel enhancement mode effect transistor

Switching application

Mechanical Data



Case: SOT-23

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-23

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

2N7001K

SOT-23

3000 pcs / Tape & Reel

7001K

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-60

±20

Gate -Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 70°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_A= 25°C ) ^*1

Operating Junction Temperature Range

Storage Temperature Range

-0.3

I_D

-0.2

-0.16

-1

I_DM

E_AS

P_D

0.3

°C

0.36

T_J

-55 ~ +150

T_STG

MTM5047A: June 2023 [2.0]

www.gmesemi.com

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