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2N7002 PDF预览

2N7002

更新时间: 2024-09-16 22:12:19
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管开关光电二极管
页数 文件大小 规格书
5页 246K
描述
DMOS Transistors (N-Channel)

2N7002 数据手册

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2N7002  
DMOS Transistors (N-Channel)  
FEATURES  
SOT-23  
.122 (3.1)  
.118 (3.0)  
High input impedance  
High-speed switching  
.016 (0.4)  
Top View  
No minority carrier storage time  
CMOS logic compatible input  
No minority carrier storage time  
CMOS logic compatible input  
No thermal runaway  
3
1
2
No secondary breakdown  
.037(0.95)  
.037(0.95)  
MECHANICAL DATA  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
Case: SOT-23 Plastic Package  
Weight: approx. 0.008 g  
Marking  
Dimensions in inches and (millimeters)  
Pin configuration  
1 = Gate, 2 = Source, 3 = Drain  
S72  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Value  
60  
Unit  
V
Drain-Source Voltage  
V
DSS  
Drain-Gate Voltage  
V
DGS  
60  
V
Gate-Source-Voltage (pulsed)  
Drain Current (continuous)  
V
±20  
V
GS  
I
D
250  
mA  
W
Power Dissipation at T = 50 °C  
P
0.3101)  
150  
C
tot  
S
Junction Temperature  
T
°C  
°C  
j
Storage Temperature Range  
1) Ceramic Substrate 0.7mm; 2.5 cm2 area.  
T
–55 to +150  
Inverse Diode  
Symbol  
Value  
0.3  
Unit  
A
Max. Forward Current (continuous)  
I
F
at T  
= 25 °C  
amb  
Forward Voltage Drop (typ.)  
at V = 0, I = 0.3 A, T = 25 °C  
V
F
0.85  
V
GS  
F
j
4/98  

2N7002 替代型号

型号 品牌 替代类型 描述 数据表
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