是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 6 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 150 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N682A | CENTRAL | SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS |
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|
2N682A | NJSEMI | Thyristor SCR 50V 200A 3-Pin TO-48 Box |
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|
2N682APBFREE | CENTRAL | 暂无描述 |
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2N682LEADFREE | CENTRAL | Silicon Controlled Rectifier, 25A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-48, TO-48 |
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2N682M | STMICROELECTRONICS | SILICON CONTROLLED RECTIFIER,50V V(DRM),16A I(T),TO-208VARM6 |
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2N682M | INFINEON | Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element |
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