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2N6833 PDF预览

2N6833

更新时间: 2024-11-25 06:17:19
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 185K
描述
isc Silicon NPN Power Transistor

2N6833 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

2N6833 数据手册

 浏览型号2N6833的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2N6833  
DESCRIPTION  
· Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 450V(Min)  
·High Switching Speed  
APPLICATIONS  
·Designed for high-voltage ,high-speed, power switching in  
inductive circuits where fall time is critical. They are partic-  
ularly suited for line operated switch-mode applications.  
Typical applications:  
·Switching regulators  
·Inverters  
·Solenoid and relay drivers  
·Motor controls  
·Deflection circuits  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
V
VCEV  
Collector-Emitter Voltage  
850  
VCEO(SUS) Collector-Emitter Voltage  
450  
V
VEBO  
IC  
ICM  
IB  
Emitter-Base Votage  
6
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-Peak  
5
A
10  
A
4
8
A
IBM  
PC  
TJ  
A
Collector Power Dissipation@TC=25  
Junction Temperature  
80  
W
150  
-65~150  
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.56  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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TRANSISTOR | BJT | NPN | 30MA I(C) | SOT-173