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2N6498 PDF预览

2N6498

更新时间: 2024-09-22 23:16:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
8页 65K
描述
POWER TRANSISTORS NPN SILICON

2N6498 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:CASE 221A-06, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.3
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):3
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):80 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):5 MHz
Base Number Matches:1

2N6498 数据手册

 浏览型号2N6498的Datasheet PDF文件第2页浏览型号2N6498的Datasheet PDF文件第3页浏览型号2N6498的Datasheet PDF文件第4页浏览型号2N6498的Datasheet PDF文件第5页浏览型号2N6498的Datasheet PDF文件第6页浏览型号2N6498的Datasheet PDF文件第7页 
ON Semiconductor)  
High Voltage NPN Silicon  
Power Transistors  
2N6497  
. . . designed for high voltage inverters, switching regulators and  
line–operated amplifier applications. Especially well suited for  
switching power supply applications.  
5 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
250 VOLT  
High Collector–Emitter Sustaining Voltage –  
V
= 250 Vdc (Min)  
80 WATTS  
CEO(sus)  
Excellent DC Current Gain  
= 10–75 @ I = 2.5 Adc  
h
FE  
C
Low Collector–Emitter Saturation Voltage @ I = 2.5 Adc –  
C
V
= 1.0 Vdc (Max)  
CE(sat)  
4
MAXIMUM RATINGS (1)  
Rating  
Symbol  
Value  
250  
350  
6.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current – Continuous  
V
CEO  
V
CB  
1
4. COLLECTOR  
2
3
V
EB  
CASE 221A–09  
TO–220AB  
I
C
5.0  
10  
Peak  
Base Current  
I
B
2.0  
Adc  
Total Power Dissipation @ T = 25_C  
P
80  
0.64  
Watts  
W/_C  
_C  
C
D
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T ,T  
J stg  
–65 to +150  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
(1) Indicates JEDEC Registered Data.  
R
1.56  
_C/W  
θJC  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 11  
2N6497/D  

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