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2N6490BG PDF预览

2N6490BG

更新时间: 2024-12-01 07:48:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
61页 367K
描述
15A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6490BG 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general–purpose amplifier and switching applications.  
DC Current Gain Specified to 15 Amperes —  
h
h
= 20150 @ I = 5.0 Adc  
FE  
FE  
C
= 5.0 (Min) @ I = 15 Adc  
C
Collector–Emitter Sustaining Voltage —  
V
V
= 60 Vdc (Min) – 2N6487, 2N6490  
= 80 Vdc (Min) – 2N6488, 2N6491  
CEO(sus)  
CEO(sus)  
*Motorola Preferred Device  
High Current Gain — Bandwidth Product  
= 5.0 MHz (Min) @ I = 1.0 Adc  
TO–220AB Compact Package  
15 AMPERE  
COMPLEMENTARY  
SILICON  
f
T
C
POWER TRANSISTORS  
6080 VOLTS  
MAXIMUM RATINGS (1)  
2N6487  
2N6490  
2N6488  
2N6491  
75 WATTS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Base Current  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
V
CEO  
60  
70  
80  
90  
V
CB  
V
EB  
5.0  
15  
I
C
I
B
5.0  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
75  
0.6  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
1.8  
0.014  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
CASE 221A–06  
TO–220AB  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.67  
70  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
(1) Indicates JEDEC Registered Data.  
R
θJC  
θJA  
R
T
A
T
C
4.0 80  
3.0 60  
2.0 40  
T
C
T
A
1.0 20  
0
0
0
20  
40  
60  
80  
100  
120  
140 160  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
3–132  
Motorola Bipolar Power Transistor Device Data  

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