Datasheet > 2N6490BG

2N6490BG

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
61页	367K
描述
15A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

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2N6490BG 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general–purpose amplifier and switching applications.

•

DC Current Gain Specified to 15 Amperes —

= 20–150 @ I = 5.0 Adc

= 5.0 (Min) @ I = 15 Adc

•

Collector–Emitter Sustaining Voltage —

= 60 Vdc (Min) – 2N6487, 2N6490

= 80 Vdc (Min) – 2N6488, 2N6491

CEO(sus)

*Motorola Preferred Device

•

High Current Gain — Bandwidth Product

= 5.0 MHz (Min) @ I = 1.0 Adc

TO–220AB Compact Package

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80 VOLTS

MAXIMUM RATINGS (1)

2N6487

2N6490

2N6488

2N6491

75 WATTS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Base Current

Symbol

Unit

Vdc

Adc

CEO

5.0

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.6

Watts

W/ C

Total Power Dissipation @ T = 25 C

Derate above 25 C

1.8

0.014

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.67

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(1) Indicates JEDEC Registered Data.

θJC

θJA

4.0 80

3.0 60

2.0 40

1.0 20

100

120

140 160

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

3–132

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...61

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