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2N6491 PDF预览

2N6491

更新时间: 2024-11-30 06:16:27
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 121K
描述
Silicon PNP Power Transistors

2N6491 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.54
Base Number Matches:1

2N6491 数据手册

 浏览型号2N6491的Datasheet PDF文件第2页浏览型号2N6491的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N6489 2N6490 2N6491  
DESCRIPTION  
·With TO-220 package  
·Excellent safe operating area  
·Complement to type 2N6486 2N6487  
2N6488 respectively  
APPLICATIONS  
·Power amplifier and medium speed  
switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-220) and symbol  
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-50  
UNIT  
2N6489  
2N6490  
2N6491  
2N6489  
2N6490  
2N6491  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
-70  
-90  
-40  
VCEO  
Collector-emitter voltage  
V
-60  
-80  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
-5  
V
A
-15  
IB  
Base current  
-5  
A
PT  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
75  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance from junction to case  
1.67  
/W  

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