Datasheet > 2N6490BG

2N6490BG

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
61页	367K
描述
15A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

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2N6490BG 数据手册

1.0

0.7

0.5

D = 0.5

0.3

0.2

0.1

0.07

0.05

(pk)

(t) = r(t) R

θJC

0.05

0.02

θJC

= 1.67°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

0.03

0.02

READ TIME AT t

J(pk)

0.01

0.02

– T = P

(pk) θJC(t)

SINGLE PULSE

0.05 0.1

DUTY CYCLE, D = t /t

1 2

0.01

0.2

0.5

1.0

2.0

5.0

100

200

500 1.0 k

t, TIME (ms)

Figure 4. Thermal Response

There are two limitations on the power handling ability of a

transistors average junction temperature and second break-

100 µs

500 µs

down. Safe operating area curves indicate I – V

limits of

5.0

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

1.0 ms

5.0 ms

2.0

1.0

T = 150°C

The data of Figure 5 is based on T

= 150 C; T is

J(pk)

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED @ T = 25°C

J(pk)

may be calculated from the data in Figure 4.

0.5

150 C. T

J(pk)

CURVES APPLY BELOW RATED V

CEO

2N6487, 2N6490

2N6488, 2N6491

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown

0.2

0.1

2.0

4.0

40 60

V , COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active–Region Safe Operating Area

5000

1000

700

1000

500

300

200

NPN

PNP

200

100

= 30 V

100

NPN

PNP

T = 25°C

I /I = 10

C B

= I

B1 B2

T = 25°C

0.2

0.5

1.0

2.0

5.0

0.5

1.0

2.0

5.0

I , COLLECTOR CURRENT (AMP)

V , REVERSE VOLTAGE (VOLTS)

Figure 6. Turn–Off Time

Figure 7. Capacitances

3–134

Motorola Bipolar Power Transistor Device Data

1 234 5 6 7...61

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