2N6405TG

更新时间： 2024-11-18 13:04:07

品牌	Logo	应用领域
安森美 - ONSEMI		栅极触发装置可控硅整流器局域网
页数	文件大小	规格书
8页	78K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N6405TG 数据手册

2N6400 Series

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supplies; or wherever

half–wave silicon gate–controlled, solid–state devices are needed.

• Glass Passivated Junctions with Center Gate Geometry for Greater

Parameter Uniformity and Stability

http://onsemi.com

SCRs

16 AMPERES RMS

50 thru 800 VOLTS

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 Volts

• Device Marking: Logo, Device Type, e.g., 2N6400, Date Code

*MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off–State Voltage (Note 1.)

RRM

Volts

DRM,

MARKING

DIAGRAM

(T = *40 to 125°C, Sine Wave

50 to 60 Hz; Gate Open)

2N6400

2N6401

2N6402

2N6403

2N6404

100

200

400

600

800

TO–220AB

CASE 221A

STYLE 3

YY WW

640x

2N6405

On-State RMS Current

(180° Conduction Angles; T = 100°C)

T(RMS)

= 0, 1, 2, 3, 4 or 5

Average On-State Current

(180° Conduction Angles; T = 100°C)

T(AV)

YY = Year

WW = Work Week

Peak Non-repetitive Surge Current

160

TSM

(1/2 Cycle, Sine Wave 60 Hz, T = 90°C)

PIN ASSIGNMENT

Cathode

Circuit Fusing (t = 8.3 ms)

Forward Peak Gate Power

I t

145

A s

Anode

Watts

(Pulse Width ≤ 1.0 µs, T = 100°C)

Gate

Anode

Forward Average Gate Power

0.5

2.0

G(AV)

(t = 8.3 ms, T = 100°C)

Forward Peak Gate Current

ORDERING INFORMATION

(Pulse Width ≤ 1.0 µs, T = 100°C)

Operating Junction Temperature Range

–40 to

+125

°C

Device

Package

TO220AB

Shipping

500/Box

2N6400

2N6401

2N6402

Storage Temperature Range

stg

–40 to

+150

°C

*Indicates JEDEC Registered Data.

1. V

and V

for all types can be applied on a continuous basis. Ratings

DRM

RRM

2N6403

2N6404

2N6405

TO220AB

500/Box

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

April, 2001 – Rev. 2

2N6400/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与2N6405TG相关器件

型号	品牌	获取价格	描述	数据表
2N6405-U2	MOTOROLA	获取价格	16A, 800V, SCR, TO-220, 2 PIN
2N6405-UA	MOTOROLA	获取价格	16A, 800V, SCR, TO-220AB
2N6405-W	MOTOROLA	获取价格	Silicon Controlled Rectifier, 16A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
2N6405-WC	MOTOROLA	获取价格	Silicon Controlled Rectifier, 16A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
2N6408	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 2A I(C) \| TO-126VAR
2N6410	NJSEMI	获取价格	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box
2N6411	NJSEMI	获取价格	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box
2N6412	NJSEMI	获取价格	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box
2N6413	NJSEMI	获取价格	COLLECTOR-EMITTER VOLTAGE
2N6414	NJSEMI	获取价格	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box

与2N6405TG相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

2N6405TG

2N6405TG 数据手册

与2N6405TG相关器件

与2N6405TG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2N6405TG

2N6405TG 数据手册

与2N6405TG相关器件

与2N6405TG相关文章

您还可以找

您在本页遇到什么问题？