Datasheet > 2N6420

2N6420

更新时间： 2024-11-18 06:19:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	178K
描述
isc Silicon PNP Power Transistor

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2N6420 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2N6420

DESCRIPTION

·Contunuous Collector Current-I_C= -1A

·Power Dissipation-P_C= 35W @T_C= 25℃

·Collector-Emitter Saturation Voltage-

: V_CE(sat)= -5.0 V(Max)@ I_C= -1A

APPLICATIONS

·Designed for high-speed switching and linear amplifier appli-

cation for high-voltage operational amplifiers, switching regu-

lators, converters,deflection stages and high fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

VALUE

-250

-175

-6

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

-1.0

I_CM

-5.0

I_B

-1.0

P_C

Collector Power Dissipation@T_C=25℃

Junction Temperature

℃

T_J

200

Storage Temperature

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

5.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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