2N6344/D

更新时间： 2024-11-17 23:19:51

品牌	Logo	应用领域
安森美 - ONSEMI		可控硅
页数	文件大小	规格书
8页	91K
描述
Triacs

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中文翻译

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数据手册

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2N6344/D 数据手册

Preferred Device

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as

light dimmers, motor controls, heating controls and power supplies; or

wherever full–wave silicon gate controlled solid–state devices are

needed. Triac type thyristors switch from a blocking to a conducting

state for either polarity of applied main terminal voltage with positive

or negative gate triggering.

http://onsemi.com

TRIACS

• Blocking Voltage to 800 Volts

• All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

8 AMPERES RMS

600 thru 800 VOLTS

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Gate Triggering Guaranteed in all Four Quadrants

• For 400 Hz Operation, Consult Factory

MT2

MT1

• Device Marking: Logo, Device Type, e.g., 2N6344, Date Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

(1)

*Peak Repetitive Off–State Voltage

Volts

DRM,

(T = –40 to +110°C, Sine Wave 50 to

RRM

60 Hz, Gate Open)

2N6344

2N6349

600

800

*On–State RMS Current

Amps

T(RMS)

(T = +80°C)

8.0

TO–220AB

CASE 221A

STYLE 4

Full Cycle Sine Wave 50 to 60 Hz

(T = +90°C)

4.0

*Peak Non–Repetitive Surge Current

(One Full Cycle, Sine Wave 60 Hz,

100

TSM

PIN ASSIGNMENT

= +25°C)

Main Terminal 1

Preceded and followed by rated current

Circuit Fusing Consideration (t = 8.3 ms)

*Peak Gate Power

Main Terminal 2

Gate

I t

A s

Watts

Watt

Amps

Volts

°C

Main Terminal 2

(T = +80°C, Pulse Width = 2 µs)

*Average Gate Power

(T = +80°C, t = 8.3 ms)

0.5

2.0

G(AV)

ORDERING INFORMATION

*Peak Gate Current

(T = +80°C, Pulse Width = 2.0 µs)

Device

2N6344

2N6349

Package

TO220AB

Shipping

500/Box

*Peak Gate Voltage

(T = +80°C, Pulse Width = 2.0 µs)

*Operating Junction Temperature Range

*Storage Temperature Range

–40 to

+125

Preferred devices are recommended choices for future use

and best overall value.

stg

–40 to

+150

°C

(1) V

DRM

and V for all types can be applied on a continuous basis. Blocking

RRM

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Semiconductor Components Industries, LLC, 1999

Publication Order Number:

March, 2000 – Rev. 1

2N6344/D

12 3 4 5 6 7 8

中文翻译

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与2N6344/D相关器件

型号	品牌	获取价格	描述	数据表
2N6344_06	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
2N6344A	NJSEMI	获取价格	SILICON BIDIRECTIONAL THYRISTORS
2N6344A	MOTOROLA	获取价格	600V, 12A, TRIAC, TO-220AB, CASE 221A-07, 3 PIN
2N6344A	ONSEMI	获取价格	Silicon Bidirectional Thyristors
2N6344A/D	ETC	获取价格	Triacs
2N6344A_06	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
2N6344A-16	MOTOROLA	获取价格	600V, 12A, TRIAC, TO-220AB, TO-220, 2 PIN
2N6344-A16A	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220, 3 PIN
2N6344A-A16A	MOTOROLA	获取价格	600V, 12A, TRIAC, TO-220AB, TO-220, 3 PIN
2N6344A-AC	MOTOROLA	获取价格	600V, 12A, TRIAC, TO-220AB

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