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2N6344A PDF预览

2N6344A

更新时间: 2024-01-01 20:00:48
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 三端双向交流开关栅极
页数 文件大小 规格书
6页 89K
描述
600V, 12A, TRIAC, TO-220AB, CASE 221A-07, 3 PIN

2N6344A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.83Is Samacsys:N
最大直流栅极触发电流:100 mA最大直流栅极触发电压:2.5 V
最大维持电流:75 mAJESD-609代码:e0
最大漏电流:2 mA最大通态电压:1.7 V
最高工作温度:110 °C最低工作温度:-40 °C
最大均方根通态电流:6 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)触发设备类型:TRIAC
Base Number Matches:1

2N6344A 数据手册

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Order this document  
by 2N6344/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Triode Thyristors  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies; or wherever full–wave silicon  
gate controlled solid–state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
TRIACs  
8 to 12 AMPERES RMS  
600 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
MT1  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Gate Triggering Guaranteed in Two Modes (2N6344, 2N6344A) or Four Modes  
(2N6348A, 2N6349)  
MT2  
G
For 400 Hz Operation, Consult Factory  
CASE 221A-07  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
*Peak Repetitive Off–State Voltage  
V
Volts  
Amps  
Amps  
DRM  
(Gate Open, T = –40 to +110°C)  
J
1/2 Sine Wave 50 to 60 Hz, Gate Open  
2N6344, 2N6344A, 2N6348  
2N6349  
600  
800  
*RMS On–State Current  
Full Cycle Sine Wave 50 to 60 Hz  
(T = +80°C) 2N6344, 2N6349  
I
8
4
12  
6
C
T(RMS)  
(T = +90°C)  
C
(T = +80°C) 2N6344A, 2N6348A  
C
(T = +90°C)  
C
*Peak Non-repetitive Surge Current  
I
100  
40  
TSM  
(One Full Cycle, 60 Hz, T = +80°C)  
C
Preceded and followed by Rated Current  
2
I t  
2
A s  
Circuit Fusing  
(t = 8.3 ms)  
*Peak Gate Power (T = +80°C, Pulse Width = 2 µs)  
P
20  
Watts  
Watt  
Amps  
Volts  
°C  
C
GM  
*Average Gate Power (T = +80°C, t = 8.3 ms)  
P
0.5  
2
C
G(AV)  
*Peak Gate Current  
I
GM  
*Peak Gate Voltage  
V
GM  
10  
*Operating Junction Temperature Range  
*Storage Temperature Range  
T
–40 to +125  
–40 to +150  
J
T
°C  
stg  
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Motorola, Inc. 1998  

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