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2N6344A PDF预览

2N6344A

更新时间: 2024-02-21 01:47:41
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 三端双向交流开关栅极
页数 文件大小 规格书
6页 89K
描述
600V, 12A, TRIAC, TO-220AB, CASE 221A-07, 3 PIN

2N6344A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.83Is Samacsys:N
最大直流栅极触发电流:100 mA最大直流栅极触发电压:2.5 V
最大维持电流:75 mAJESD-609代码:e0
最大漏电流:2 mA最大通态电压:1.7 V
最高工作温度:110 °C最低工作温度:-40 °C
最大均方根通态电流:6 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)触发设备类型:TRIAC
Base Number Matches:1

2N6344A 数据手册

 浏览型号2N6344A的Datasheet PDF文件第1页浏览型号2N6344A的Datasheet PDF文件第3页浏览型号2N6344A的Datasheet PDF文件第4页浏览型号2N6344A的Datasheet PDF文件第5页浏览型号2N6344A的Datasheet PDF文件第6页 
THERMAL CHARACTERISTICS  
Characteristic  
*Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
2.2  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C, and Either Polarity of MT2 to MT1 Voltage, unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
*Peak Blocking Current  
(V = Rated V  
I
DRM  
)
T = 25°C  
T = 100°C  
J
10  
2
µA  
mA  
D
DRM, gate open  
J
*Peak On–State Voltage  
(I = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)  
V
1.3  
1.55  
Volts  
mA  
TM  
TM  
Gate Trigger Current (Continuous dc)  
(V = 12 Vdc, R = 100 Ohms)  
I
GT  
D
L
(Minimum Gate Pulse Width = 2 µs)  
MT2(+), G(+) All Types  
12  
12  
20  
35  
50  
75  
50  
75  
100  
125  
MT2(+), G(–) 2N6349  
MT2(–), G(–) All Types  
MT2(–), G(+) 2N6349  
*MT2(+), G(+); MT2(–), G(–) T = –40°C All Types  
C
*MT2(+), G(–); MT2(–), G(+) T = –40°C 2N6349  
C
Gate Trigger Voltage (Continuous dc)  
V
GT  
Volts  
(V = 12 Vdc, R = 100 Ohms)  
D
L
(Minimum Gate Pulse Width = 2 µs)  
MT2(+), G(+) All Types  
0.9  
0.9  
1.1  
1.4  
2
2.5  
2
2.5  
2.5  
3
MT2(+), G(–) 2N6349  
MT2(–), G(–) All Types  
MT2(–), G(+) 2N6349  
*MT2(+), G(+); MT2(–), G(–) T = –40°C All Types  
C
*MT2(+), G(–); MT2(–), G(+) T = –40°C 2N6349  
C
(V = Rated V  
, R = 10 k Ohms, T = 100°C)  
D
DRM  
L J  
*MT2(+), G(+); MT2(–), G(–) All Types  
*MT2(+), G(–); MT2(–), G(–) 2N6349  
0.2  
0.2  
*Holding Current  
I
mA  
µs  
H
(V = 12 Vdc, Gate Open)  
T
= 25°C  
6
40  
75  
D
C
C
(I = 200 mA)  
T
*T = –40°C  
* Turn-On Time  
t
gt  
1.5  
2
(V = Rated V  
Rise Time = 0.1 µs, Pulse Width = 2 µs)  
, I  
= 11 A, I  
= 120 mA,  
GT  
D
DRM TM  
Critical Rate of Rise of Commutation Voltage  
dv/dt(c)  
5
V/µs  
(V = Rated V  
Gate Unenergized, T = 80°C)  
, I = 11 A, Commutating di/dt = 4.0 A/ms,  
D
DRM TM  
C
*Indicates JEDEC Registered Data.  
FIGURE 1 – RMS CURRENT DERATING  
FIGURE 2 – ON-STATE POWER DISSIPATION  
100  
96  
10  
dc  
α
= 30°  
α
α
= 180  
°
60  
°
8.0  
120°  
α
90  
°
90  
°
α
= CONDUCTION ANGLE  
120°  
6.0  
4.0  
2.0  
92  
60°  
T
100°C  
J
30  
°
180  
°
α
88  
α
84  
80  
α
= CONDUCTION ANGLE  
dc  
0
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
I
, RMS ON-STATE CURRENT (AMP)  
I
, RMS ON-STATE CURRENT, (AMP)  
T(RMS)  
T(RMS)  
2
Motorola Thyristor Device Data  

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