Datasheet > 2N6344A/D

2N6344A/D

更新时间： 2024-11-17 23:19:51

品牌	Logo	应用领域
其他 - ETC		可控硅
页数	文件大小	规格书
8页	93K
描述
Triacs

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中文翻译

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数据手册

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2N6344A/D 数据手册

Preferred Device

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as

light dimmers, motor controls, heating controls and power supplies; or

wherever full-wave silicon gate controlled solid-state devices are

needed. Triac type thyristors switch from a blocking to a conducting

state for either polarity of applied anode voltage with positive or

negative gate triggering.

http://onsemi.com

TRIACS

12 AMPERES RMS

600 thru 800 VOLTS

• Blocking Voltage to 800 Volts

• All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Gate Triggering Guaranteed in all Four Quadrants

• For 400 Hz Operation, Consult Factory

MT2

MT1

• 8 Ampere Devices Available as 2N6344 thru 2N6349

• Device Marking: Logo, Device Type, e.g., 2N6344A, Date Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

(1)

*Peak Repetitive Off–State Voltage

Volts

DRM,

(Gate Open, T = –40 to +110°C,

RRM

Sine Wave 50 to 60 Hz, Gate Open)

2N6344A, 2N6348A

2N6349A

600

800

*On–State RMS Current

(Full Cycle Sine Wave 50 to 60 Hz)

T(RMS)

TO–220AB

CASE 221A

STYLE 4

(T = +80°C)

(T = +95°C)

6.0

*Peak Non–repetitive Surge Current

(One Full Cycle, 60 Hz, T = +80°C)

Preceded and followed by rated current

100

TSM

PIN ASSIGNMENT

Main Terminal 1

I t

A s

Circuit Fusing Consideration (t = 8.3 ms)

Main Terminal 2

Gate

*Peak Gate Power (T = +80°C,

Watts

Watt

Pulse Width = 2.0 µs)

Main Terminal 2

*Average Gate Power

(T = +80°C, t = 8.3 ms)

0.5

2.0

G(AV)

ORDERING INFORMATION

*Peak Gate Current

(Pulse Width = 2.0 µs; T = +80°C)

Device

2N6344A

2N6348A

2N6349A

Package

TO220AB

Shipping

500/Box

*Peak Gate Voltage

(Pulse Width = 2.0 µs; T = +80°C)

Volts

°C

*Operating Junction Temperature Range

–40 to

+125

*Storage Temperature Range

stg

–40 to

+150

°C

Preferred devices are recommended choices for future use

and best overall value.

*Indicates JEDEC Registered Data.

(1) V

DRM

and V for all types can be applied on a continuous basis. Blocking

RRM

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Semiconductor Components Industries, LLC, 1999

Publication Order Number:

February, 2000 – Rev. 1

2N6344A/D

12 3 4 5 6 7 8

中文翻译

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与2N6344A/D相关器件

型号	品牌	获取价格	描述	数据表
2N6344A_06	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
2N6344A-16	MOTOROLA	获取价格	600V, 12A, TRIAC, TO-220AB, TO-220, 2 PIN
2N6344-A16A	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220, 3 PIN
2N6344A-A16A	MOTOROLA	获取价格	600V, 12A, TRIAC, TO-220AB, TO-220, 3 PIN
2N6344A-AC	MOTOROLA	获取价格	600V, 12A, TRIAC, TO-220AB
2N6344A-AD	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,
2N6344A-AF	MOTOROLA	获取价格	600V, 12A, TRIAC, TO-220AB
2N6344A-AN	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,
2N6344A-AS	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,
2N6344A-AU	MOTOROLA	获取价格	600V, 12A, TRIAC, TO-220AB

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