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2N6344/D PDF预览

2N6344/D

更新时间: 2024-02-13 11:21:21
品牌 Logo 应用领域
安森美 - ONSEMI 可控硅
页数 文件大小 规格书
8页 91K
描述
Triacs

2N6344/D 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.7
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:TRIACBase Number Matches:1

2N6344/D 数据手册

 浏览型号2N6344/D的Datasheet PDF文件第1页浏览型号2N6344/D的Datasheet PDF文件第3页浏览型号2N6344/D的Datasheet PDF文件第4页浏览型号2N6344/D的Datasheet PDF文件第5页浏览型号2N6344/D的Datasheet PDF文件第6页浏览型号2N6344/D的Datasheet PDF文件第7页 
2N6344, 2N6349  
THERMAL CHARACTERISTICS  
Characteristic  
*Thermal Resistance, Junction to Case  
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds  
Symbol  
Max  
2.2  
Unit  
°C/W  
°C  
R
θJC  
T
L
260  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
*Peak Repetitive Blocking Current  
(V = Rated V , V ; Gate Open)  
I
,
DRM  
T = 25°C  
T = 100°C  
J
I
RRM  
10  
2.0  
µA  
mA  
D
DRM RRM  
J
ON CHARACTERISTICS  
*Peak On–State Voltage  
V
1.3  
1.55  
Volts  
mA  
TM  
(I  
TM  
=
11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)  
Gate Trigger Current (Continuous dc)  
I
GT  
(V = 12 Vdc, R = 100 Ohms)  
D
L
MT2(+), G(+)  
12  
12  
20  
35  
50  
75  
50  
75  
100  
125  
MT2(+), G(–)  
MT2(–), G(–)  
MT2(–), G(+)  
*MT2(+), G(+); MT2(–), G(–) T = –40°C  
*MT2(+), G(–); MT2(–), G(+) T = –40°C  
C
C
Gate Trigger Voltage (Continuous dc)  
V
GT  
Volts  
(V = 12 Vdc, R = 100 Ohms)  
D
L
MT2(+), G(+)  
0.9  
0.9  
1.1  
1.4  
2.0  
2.5  
2.0  
2.5  
2.5  
3.0  
MT2(+), G(–)  
MT2(–), G(–)  
MT2(–), G(+)  
*MT2(+), G(+); MT2(–), G(–) T = –40°C  
C
*MT2(+), G(–); MT2(–), G(+) T = –40°C  
C
Gate Non–Trigger Voltage (Continuous dc)  
V
Volts  
mA  
µs  
GD  
(V = Rated V  
*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(–)  
, R = 10 k Ohms, T = 100°C)  
L J  
D
DRM  
0.2  
*Holding Current  
(V = 12 Vdc, Gate Open)  
D
(Initiating Current = 200 mA)  
I
H
T
= 25°C  
6.0  
40  
75  
C
C
*T = –40°C  
* Turn-On Time  
t
1.5  
5.0  
2.0  
gt  
(V = Rated V  
Rise Time = 0.1 µs, Pulse Width = 2 µs)  
, I  
= 11 A, I  
= 120 mA,  
GT  
D
DRM TM  
DYNAMIC CHARACTERISTICS  
Critical Rate of Rise of Commutation Voltage  
dv/dt(c)  
V/µs  
(V = Rated V  
Gate Unenergized, T = 80°C)  
, I = 11 A, Commutating di/dt = 4.0 A/ms,  
D
DRM TM  
C
*Indicates JEDEC Registered Data.  
http://onsemi.com  
2

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