2N6344, 2N6349
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Max
2.2
Unit
°C/W
°C
R
θJC
T
L
260
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(V = Rated V , V ; Gate Open)
I
,
DRM
T = 25°C
T = 100°C
J
I
RRM
—
—
—
—
10
2.0
µA
mA
D
DRM RRM
J
ON CHARACTERISTICS
*Peak On–State Voltage
V
—
1.3
1.55
Volts
mA
TM
(I
TM
=
11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)
Gate Trigger Current (Continuous dc)
I
GT
(V = 12 Vdc, R = 100 Ohms)
D
L
MT2(+), G(+)
—
—
—
—
—
—
12
12
20
35
—
—
50
75
50
75
100
125
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) T = –40°C
*MT2(+), G(–); MT2(–), G(+) T = –40°C
C
C
Gate Trigger Voltage (Continuous dc)
V
GT
Volts
(V = 12 Vdc, R = 100 Ohms)
D
L
MT2(+), G(+)
—
—
—
—
—
—
0.9
0.9
1.1
1.4
—
2.0
2.5
2.0
2.5
2.5
3.0
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) T = –40°C
C
*MT2(+), G(–); MT2(–), G(+) T = –40°C
—
C
Gate Non–Trigger Voltage (Continuous dc)
V
Volts
mA
µs
GD
(V = Rated V
*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(–)
, R = 10 k Ohms, T = 100°C)
L J
D
DRM
0.2
—
—
*Holding Current
(V = 12 Vdc, Gate Open)
D
(Initiating Current = 200 mA)
I
H
T
= 25°C
—
—
6.0
—
40
75
C
C
*T = –40°C
* Turn-On Time
t
—
—
1.5
5.0
2.0
—
gt
(V = Rated V
Rise Time = 0.1 µs, Pulse Width = 2 µs)
, I
= 11 A, I
= 120 mA,
GT
D
DRM TM
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
dv/dt(c)
V/µs
(V = Rated V
Gate Unenergized, T = 80°C)
, I = 11 A, Commutating di/dt = 4.0 A/ms,
D
DRM TM
C
*Indicates JEDEC Registered Data.
http://onsemi.com
2