2N6344
Triacs
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full−wave silicon gate controlled solid−state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
http://onsemi.com
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
Features
• Blocking Voltage to 800 V
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
MT2
MT1
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in all Four Quadrants
• For 400 Hz Operation, Consult Factory
• Pb−Free Package is Available*
G
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
4
†Peak Repetitive Off−State Voltage (Note 1)
V
V
V
DRM,
RRM
(T = −40 to +110°C, Sine Wave
J
50 to 60 Hz, Gate Open)
2N6344
2N6349
600
800
2N6344G
AYWW
TO−220AB
CASE 221A
STYLE 4
†On−State RMS Current (T = +80°C) Full
I
8.0
4.0
A
A
C
T(RMS)
Cycle Sine Wave 50 to 60 Hz (T = +90°C)
1
C
2
3
†Peak Non−Repetitive Surge Current (One
I
100
TSM
Full Cycle, Sine Wave 60 Hz, T = +25°C)
C
Preceded and followed by rated current
Circuit Fusing Consideration (t = 8.3 ms)
†Peak Gate Power
A
Y
= Assembly Location
= Year
2
2
I t
40
20
A s
WW = Work Week
G
P
W
W
A
GM
(T = +80°C, Pulse Width = 2 ms)
C
= Pb−Free Package
†Average Gate Power
(T = +80°C, t = 8.3 ms)
C
P
0.5
2.0
10
G(AV)
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
†Peak Gate Current
(T = +80°C, Pulse Width = 2.0 ms)
C
I
GM
1
2
3
4
†Peak Gate Voltage
(T = +80°C, Pulse Width = 2.0 ms)
C
V
V
GM
†Operating Junction Temperature Range
Storage Temperature Range
T
J
−40 to +125 °C
−40 to +150 °C
Main Terminal 2
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device
Package
Shipping
2N6344
TO−220AB
500 Units / Box
500 Units / Box
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2N6344G
TO−220AB
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
May, 2006 − Rev. 4
2N6344/D
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