是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SFM | 包装说明: | TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.27 |
Is Samacsys: | N | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 7 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
功耗环境最大值: | 40 W | 最大功率耗散 (Abs): | 40 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2.5 MHz |
VCEsat-Max: | 1.4 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6126-6200 | RENESAS |
获取价格 |
4A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6126-6203 | RENESAS |
获取价格 |
4A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6126-6226 | RENESAS |
获取价格 |
4A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6126-6255 | RENESAS |
获取价格 |
4A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6126-6258 | RENESAS |
获取价格 |
4A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6126-6261 | RENESAS |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2N6126-6263 | RENESAS |
获取价格 |
4A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6126-6264 | RENESAS |
获取价格 |
4A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6126-DR6259 | RENESAS |
获取价格 |
4A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6126-DR6260 | RENESAS |
获取价格 |
4A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB |