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2N6130 PDF预览

2N6130

更新时间: 2024-11-28 07:29:03
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 42K
描述
Silicon NPN Power Transistors

2N6130 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

2N6130 数据手册

 浏览型号2N6130的Datasheet PDF文件第2页浏览型号2N6130的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6129 2N6130 2N6131  
DESCRIPTION  
·With TO-220 package  
·High power dissipation  
·Complement to PNP type :  
2N6132 2N6133 2N6134  
APPLICATIONS  
·Power amplifier and medium speed  
switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N6129  
2N6130  
2N6131  
2N6129  
2N6130  
2N6131  
40  
60  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
80  
40  
VCEO  
Collector-emitter voltage  
V
60  
80  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
7
IB  
Base current  
3
A
PT  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
50  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance from junction to case  
MAX  
UNIT  
Rth j-c  
2.5  
/W  

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