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2N6111 PDF预览

2N6111

更新时间: 2024-11-27 22:35:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管
页数 文件大小 规格书
4页 72K
描述
SILICON PNP SWITCHING TRANSISTORS

2N6111 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:7.74最大集电极电流 (IC):7 A
基于收集器的最大容量:250 pF集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):2.3
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP功耗环境最大值:40 W
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzVCEsat-Max:3.5 V
Base Number Matches:1

2N6111 数据手册

 浏览型号2N6111的Datasheet PDF文件第2页浏览型号2N6111的Datasheet PDF文件第3页浏览型号2N6111的Datasheet PDF文件第4页 
2N6107  
2N6111  
SILICON PNP SWITCHING TRANSISTORS  
SGS-THOMSON PREFERRED SALESTYPES  
PNP TRANSISTORS  
APPLICATIONS:  
LINEAR AND SWITCHING INDUSTRIAL  
EQUIPMENT  
3
2
1
TO-220  
DESCRIPTION  
The 2N6107 and 2N6111 are epitaxial-base PNP  
silicon transistors in Jedec TO-220 plastic  
package. They are intended for a wide variety of  
medium power switching and linear applications.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
2N6107  
80  
2N6111  
40  
VCBO  
VCEX  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (RBE = 100 )  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
80  
40  
70  
30  
V
5
V
7
A
IB  
Base Current  
3
40  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP devices voltage and current values are negative  
1/4  
June 1997  

2N6111 替代型号

型号 品牌 替代类型 描述 数据表
2N6111LEADFREE CENTRAL

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