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2N6111G

更新时间： 2024-11-09 12:26:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 117K
描述
7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 − 50 − 70 VOLTS, 40 WATTS

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2N6111G 数据手册

 浏览型号2N6111G的Datasheet PDF文件第2页浏览型号2N6111G的Datasheet PDF文件第3页浏览型号2N6111G的Datasheet PDF文件第4页浏览型号2N6111G的Datasheet PDF文件第5页 
PNP - 2N6107, 2N6109,  
2N6111; NPN - 2N6288,  
2N6292  
Complementary Silicon  
Plastic Power Transistors  
http://onsemi.com  
These devices are designed for use in general−purpose amplifier and  
switching applications.  
7 AMPERE  
Features  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
30 − 50 − 70 VOLTS, 40 WATTS  
• DC Current Gain Specified to 7.0 Amperes  
h
FE  
= 30−150 @ I  
C
= 3.0 Adc − 2N6111, 2N6288  
= 2.3 (Min) @ I = 7.0 Adc − All Devices  
C
• Collector−Emitter Sustaining Voltage −  
MARKING  
DIAGRAM  
V
= 30 Vdc (Min) − 2N6111, 2N6288  
= 50 Vdc (Min) − 2N6109  
CEO(sus)  
= 70 Vdc (Min) − 2N6107, 2N6292  
• High Current Gain − Bandwidth Product  
4
f = 4.0 MHz (Min) @ I = 500 mAdc − 2N6288, 90, 92  
T
C
= 10 MHz (Min) @ I = 500 mAdc − 2N6107, 09, 11  
C
TO−220AB  
CASE 221A  
STYLE 1  
2N6xxxG  
AYWW  
• TO−220AB Compact Package  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (Note 1)  
PIN 1. BASE  
1
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
2
Rating  
Symbol  
Value  
Unit  
3
Collector−Emitter Voltage  
2N6111, 2N6288  
2N6109  
V
Vdc  
CEO  
30  
50  
70  
2N6xxx = Specific Device Code  
xxx  
G
A
= See Table on Page 4  
= Pb−Free Package  
= Assembly Location  
= Year  
2N6107, 2N6292  
Collector−Base Voltage  
2N6111, 2N6288  
2N6109  
V
Vdc  
CB  
40  
60  
80  
Y
WW  
= Work Week  
2N6107, 2N6292  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
Collector Current − Continuous  
− Peak  
I
7.0  
10  
ORDERING INFORMATION  
C
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 4 of this data sheet.  
Base Current  
I
B
3.0  
Adc  
Total Power Dissipation @ T = 25_C  
P
D
40  
0.32  
W
W/°C  
C
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
R
3.125  
_C/W  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 − Rev. 9  
2N6107/D  
 
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2N6111G 替代型号

型号 品牌 替代类型 描述 数据表
2N6111 ONSEMI

类似代替

 POWER TRANSISTORS COMPLEMENTARY SILICON
2N6111 STMICROELECTRONICS

功能相似

 SILICON PNP SWITCHING TRANSISTORS

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