Datasheet > 2N6111AN

2N6111AN

更新时间： 2024-11-29 08:57:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
60页	371K
描述
7A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

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2N6111AN 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general–purpose amplifier and switching applications.

•

DC Current Gain Specified to 7.0 Amperes

= 30–150 @ I = 3.0 Adc — 2N6111, 2N6288

= 2.3 (Min) @ I = 7.0 Adc — All Devices

•

Collector–Emitter Sustaining Voltage —

= 30 Vdc (Min) — 2N6111, 2N6288

= 50 Vdc (Min) — 2N6109

= 70 Vdc (Min) — 2N6107, 2N6292

CEO(sus)

•

High Current Gain — Bandwidth Product

= 4.0 MHz (Min) @ I = 500 mAdc — 2N6288, 90, 92

= 10 MHz (Min) @ I = 500 mAdc — 2N6107, 09, 11

*Motorola Preferred Device

TO–220AB Compact Package

7 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

*MAXIMUM RATINGS

2N6111

2N6288

2N6107

2N6292

Rating

Symbol

2N6109

Unit

30–50–70 VOLTS

40 WATTS

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Vdc

Adc

CEO

5.0

Collector Current — Continuous

Peak

7.0

Base Current

3.0

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.32

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

CASE 221A–06

TO–220AB

Thermal Resistance, Junction to Case

* Indicates JEDEC Registered Data.

3.125

C/W

θJC

100

120

140

160

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

3–101

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...60

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2N6111BD	ONSEMI	获取价格	7A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
2N6111BG	ONSEMI	获取价格	7A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
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2N6111-DR6280	RENESAS	获取价格	7A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB