生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.66 | Is Samacsys: | N |
最大集电极电流 (IC): | 8 A | 集电极-发射极最大电压: | 100 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 1000 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 4 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N604516 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6045-6200 | RENESAS |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6045-6203 | RENESAS |
获取价格 |
8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6045-6226 | RENESAS |
获取价格 |
8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6045-6255 | RENESAS |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6045-6258 | RENESAS |
获取价格 |
8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6045-6263 | RENESAS |
获取价格 |
8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6045-6264 | RENESAS |
获取价格 |
8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6045-6265 | RENESAS |
获取价格 |
8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6045A | MOTOROLA |
获取价格 |
8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB |