Datasheet > 2N6045BU

2N6045BU

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
61页	418K
描述
8A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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2N6045BU 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose amplifier and low–speed switching applications.

•

High DC Current Gain —

= 2500 (Typ) @ I = 4.0 Adc

Collector–Emitter Sustaining Voltage — @ 100 mAdc —

•

= 60 Vdc (Min) — 2N6040, 2N6043

= 80 Vdc (Min) — 2N6041, 2N6044

= 100 Vdc (Min) — 2N6042, 2N6045

CEO(sus)

•

Low Collector–Emitter Saturation Voltage —

= 2.0 Vdc (Max) @ I = 4.0 Adc — 2N6040,41, 2N6043,44

CE(sat)

= 2.0 Vdc (Max) @ I = 3.0 Adc — 2N6042, 2N6045

Monolithic Construction with Built–In Base–Emitter Shunt Resistors

*Motorola Preferred Device

MAXIMUM RATINGS (1)

2N6040 2N6041 2N6042

2N6043 2N6044 2N6045

DARLINGTON

8 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80–100 VOLTS

75 WATTS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

8.0

Base Current

120

mAdc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.60

Watts

W/ C

Total Power Dissipation @ T = 25 C

Derate above 25 C

2.2

0.0175

Watts

W/ C

Operating and Storage Junction,

Temperature Range

T , T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(1) Indicates JEDEC Registered Data.

1.67

CASE 221A–06

TO–220AB

4.0 80

3.0 60

2.0 40

1.0 20

100

120

140

160

T, TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

3–89

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...61

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