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2N5639RLRA PDF预览

2N5639RLRA

更新时间： 2024-09-20 13:04:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关
页数 文件大小 规格书
3页 52K
描述
JFET Chopper Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL

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2N5639RLRA 技术参数

是否无铅： 含铅生命周期：End Of Life
零件包装代码：TO-92包装说明：CYLINDRICAL, O-PBCY-T3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.11配置：SINGLE
最小漏源击穿电压：30 V最大漏源导通电阻：60 Ω
FET 技术：JUNCTION最大反馈电容 (Crss)：4 pF
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-T3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：DEPLETION MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：240极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.31 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2N5639RLRA 数据手册

 浏览型号2N5639RLRA的Datasheet PDF文件第2页浏览型号2N5639RLRA的Datasheet PDF文件第3页 
2N5638, 2N5639  
2N5638 is a Preferred Device  
JFET Chopper Transistors  
N−Channel − Depletion  
N−Channel Junction Field Effect Transistors, depletion mode  
(Type A) designed for chopper and high−speed switching applications.  
Features  
http://onsemi.com  
• Low Drain−Source “ON” Resistance: RDS(on) = 30W for 2N5638  
RDS(on) = 60W for 2N5639  
1 DRAIN  
• Low Reverse Transfer Capacitance −  
C
rss  
= 4.0 pF (Max) @ f = 1.0 MHz  
3
• Fast Switching Characteristics − t = 5.0 ns (Max) (2N5638)  
r
GATE  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
2 SOURCE  
Rating  
Drain−Source Voltage  
Drain−Gate Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
V
DS  
DG  
MARKING  
DIAGRAM  
V
30  
Vdc  
Reverse Gate−Source Voltage  
Forward Gate Current  
Total Device Dissipation  
V
30  
Vdc  
GSR  
I
10  
mAdc  
GF  
2N  
563x  
AYWW G  
G
P
D
TO−92  
CASE 29  
STYLE 5  
@ T = 25°C  
310  
2.82  
mW  
mW/°C  
A
Derate above 25°C  
Storage Temperature Range  
Operating Junction Temp Range  
T
−65 to +150  
−65 to +135  
°C  
°C  
stg  
T
J
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
x = 8 or 9  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
V
DD  
= 10 Vdc  
G
= Pb−Free Package  
V
I
DD  
D
(
)
) 50  
DS(on)  
(Note: Microdot may be in either location)  
R
+
* R  
L
0.1 mF  
50  
TO  
50 W  
SCOPE B  
ORDERING INFORMATION  
PULSE  
GENERATOR  
+
−
†
R
Device  
Package  
Shipping  
L
0.001 mF  
INPUT  
2N5638RLRA  
TO−92  
2000/Tape & Reel  
2000/Tape & Reel  
(SCOPE A)  
10%  
90%  
V
V
GS(on)  
2N5638RLRAG  
TO−92  
(Pb−Free)  
50 W  
GS(off)  
2N5639  
TO−92  
1000 Units/Box  
1000 Units/Box  
t
d(on)  
2N5639G  
TO−92  
(Pb−Free)  
1.0 k  
50  
TO  
50 W  
SCOPE A  
t
f
t
r
t
d(off)  
90%  
10%  
2N5369RLRA  
TO−92  
2000/Tape & Reel  
2000/Tape & Reel  
2N5369RLRAG  
TO−92  
(Pb−Free)  
OUTPUT  
(SCOPE B)  
50  
SCOPE  
TEKTRONIX 567A  
OR EQUIVALENT  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Figure 1. Switching Times Test Circuit  
Preferred devices are recommended choices for future use  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 4  
2N5638/D  
 
123

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