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2N5640R-STYLE-E PDF预览

2N5640R-STYLE-E

更新时间: 2024-11-02 18:42:31
品牌 Logo 应用领域
急速微 - ALLEGRO 晶体管
页数 文件大小 规格书
3页 107K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA

2N5640R-STYLE-E 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknown风险等级:5.64
配置:SINGLE最大漏源导通电阻:100 Ω
FET 技术:JUNCTION最大反馈电容 (Crss):4 pF
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
Base Number Matches:1

2N5640R-STYLE-E 数据手册

 浏览型号2N5640R-STYLE-E的Datasheet PDF文件第2页浏览型号2N5640R-STYLE-E的Datasheet PDF文件第3页 

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